Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET wi… G NewsWire_semic (34.♡.82.65) 0 29 11.14 09:30 https://www.newswire.co.kr/newsRead.php?no=1000735&sourceType=rss + 5 http://api.newswire.co.kr/rss/industry/607 + 5 Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed “X5M007E120,” a bare die[1] 1200V silicon carbide (SiC) MOSFET for automotive traction inverters[2] with an innovative structure that deliver both low On-resistance and hi...